类型 | 描述 |
---|---|
系列: | XPT™ |
包裹: | Tube |
零件状态: | Active |
igbt型: | - |
电压 - 集电极发射极击穿(最大值): | 2500 V |
电流 - 集电极 (ic) (max): | 95 A |
电流 - 集电极脉冲 (icm): | 235 A |
vce(on) (max) @ vge, ic: | 4V @ 15V, 25A |
功率 - 最大值: | 937 W |
开关能量: | 8.3mJ (on), 7.3mJ (off) |
输入类型: | Standard |
栅极电荷: | 147 nC |
td(开/关)@ 25°c: | 15ns/230ns |
测试条件: | 1250V, 25A, 5Ohm, 15V |
反向恢复时间 (trr): | 34 ns |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247HV (IXYH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FGH50T65UPDSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 650V 100A TO247-3 |
|
ISL9V3036S3STRochester Electronics |
IGBT, 360V, 17A, 1.58V, 300MJ, D |
|
STGP10NC60HDSTMicroelectronics |
IGBT 600V 20A 65W TO220 |
|
IRGP4750D-EPBFRochester Electronics |
IGBT W/ULTRAFAST SOFT RECOVERY D |
|
IGW60T120Rochester Electronics |
IGW60T120 - DISCRETE IGBT WITHOU |
|
STGWA40H65DFB2STMicroelectronics |
TRENCH GATE FIELD-STOP 650 V 40 |
|
STGW8M120DF3STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |
|
IRGP50B60PD1PBF-INFRochester Electronics |
AUTOMOTIVE WARP2 IGBT ULTRAFAST |
|
STGD10NC60HDT4STMicroelectronics |
IGBT 600V 20A 62W D2PAK |
|
IKW20N60H3Rochester Electronics |
IKW20N60 - DISCRETE IGBT WITH AN |
|
IXGH25N250Wickmann / Littelfuse |
IGBT 2500V 60A 250W TO247 |
|
HGT1S20N36G3VLRochester Electronics |
N-CHANNEL IGBT |
|
APT13GP120BDQ1GRoving Networks / Microchip Technology |
IGBT 1200V 41A 250W TO247 |