English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | Trench |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 45 A |
| 电流 - 集电极脉冲 (icm): | - |
| vce(on) (max) @ vge, ic: | 2.2V @ 15V, 22A |
| 功率 - 最大值: | 40 W |
| 开关能量: | 230µJ (on), 290µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 46 nC |
| td（开/关）@ 25°c: | 40ns/80ns |
| 测试条件: | 300V, 22A, 5Ohm, 15V |
| 反向恢复时间 (trr): | 100 ns |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-3PFM, SC-93-3 |
| 供应商设备包: | TO-3PFM |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STGP14N60DSTMicroelectronics |
IGBT 600V 25A 95W TO220 |
|
SGH15N60RUFDTUSanyo Semiconductor/ON Semiconductor |
IGBT 600V 24A 160W TO3P |
|
IXBH40N160Wickmann / Littelfuse |
IGBT 1600V 33A 350W TO247AD |
|
NGB15N41CLT4Sanyo Semiconductor/ON Semiconductor |
IGBT 440V 15A 107W D2PAK |
|
IRGS30B60KPBFIR (Infineon Technologies) |
IGBT 600V 78A 370W D2PAK |
|
RJH60V1BDPE-00#J3Renesas Electronics America |
IGBT 600V 16A 52W LDPAK |
|
RJH1CF6RDPQ-80#T2Renesas Electronics America |
IGBT 1200V 55A 227.2W TO247 |
|
HGTG12N60B3Sanyo Semiconductor/ON Semiconductor |
IGBT 600V 27A 104W TO247 |
|
APT30GT60KRGMicrosemi |
IGBT 600V 64A 250W TO220 |
|
IXGH31N60D1Wickmann / Littelfuse |
IGBT 600V 60A 150W TO247AD |
|
RJH60V2BDPE-00#J3Renesas Electronics America |
IGBT 600V 25A 63W LDPAK |
|
STGP30NC60WSTMicroelectronics |
IGBT 600V 60A 200W TO220 |
|
STGWF40V60DFSTMicroelectronics |
IGBT BIPO 600V 40A TO3P |
