类型 | 描述 |
---|---|
系列: | BIMOSFET™ |
包裹: | Tube |
零件状态: | Active |
igbt型: | - |
电压 - 集电极发射极击穿(最大值): | 3000 V |
电流 - 集电极 (ic) (max): | 50 A |
电流 - 集电极脉冲 (icm): | 430 A |
vce(on) (max) @ vge, ic: | 6V @ 15V, 20A |
功率 - 最大值: | 417 W |
开关能量: | 23mJ (on), 2.6mJ (off) |
输入类型: | Standard |
栅极电荷: | 425 nC |
td(开/关)@ 25°c: | 33ns/370ns |
测试条件: | 1500V, 20A, 3Ohm, 15V |
反向恢复时间 (trr): | 864 ns |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | ISOPLUSi5-Pak™ |
供应商设备包: | ISOPLUSi5-Pak™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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