English
简体中文
MOSFET N-CH 30V 30A DIRECTFET
IGBT 430V TO200FL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 430 V |
| 电流 - 集电极 (ic) (max): | - |
| 电流 - 集电极脉冲 (icm): | 200 A |
| vce(on) (max) @ vge, ic: | 10V @ 26V, 200A |
| 功率 - 最大值: | 30 W |
| 开关能量: | - |
| 输入类型: | Standard |
| 栅极电荷: | - |
| td（开/关）@ 25°c: | 50ns/100ns |
| 测试条件: | 300V, 200A, 30Ohm, 26V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-3 Full Pack |
| 供应商设备包: | TO-220FL |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXGT30N60B2D1Wickmann / Littelfuse |
IGBT 600V 70A 190W TO268 |
|
IXSK35N120BD1Wickmann / Littelfuse |
IGBT 1200V 70A 300W TO264 |
|
IXGP12N60BWickmann / Littelfuse |
IGBT 600V 24A 100W TO220AB |
|
FGA90N33ATTUSanyo Semiconductor/ON Semiconductor |
IGBT 330V 90A 223W TO3P |
|
IRG4RC10KDPBFIR (Infineon Technologies) |
IGBT 600V 9A 38W DPAK |
|
APT11GF120BRDQ1GMicrosemi |
IGBT 1200V 25A 156W TO247 |
|
IXGT60N60Wickmann / Littelfuse |
IGBT 600V 75A 300W TO268 |
|
HGT1S20N35G3VLSSanyo Semiconductor/ON Semiconductor |
IGBT 380V 20A 150W TO263AB |
|
IRG4BC10KPBFIR (Infineon Technologies) |
IGBT 600V 9A 38W TO220AB |
|
IXGX40N120BD1Wickmann / Littelfuse |
IGBT 1200V PLUS247 |
|
IRG6I330U-110PIR (Infineon Technologies) |
IGBT 330V 28A 43W TO220ABFP |
|
HGT1S12N60A4S9ASanyo Semiconductor/ON Semiconductor |
IGBT 600V 54A 167W TO263AB |
|
IRGS4630DTRLPBFIR (Infineon Technologies) |
IGBT 600V 47A 206W D2PAK |