English
简体中文
RES SMD 1.54K OHM 1% 3/4W 2010
IXBT2N250 TR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | BIMOSFET™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 2500 V |
| 电流 - 集电极 (ic) (max): | 5 A |
| 电流 - 集电极脉冲 (icm): | 13 A |
| vce(on) (max) @ vge, ic: | 3.5V @ 15V, 2A |
| 功率 - 最大值: | 32 W |
| 开关能量: | - |
| 输入类型: | Standard |
| 栅极电荷: | 10.6 nC |
| td（开/关）@ 25°c: | 30ns/70ns |
| 测试条件: | 2000V, 2A, 47Ohm, 15V |
| 反向恢复时间 (trr): | 920 ns |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| 供应商设备包: | TO-268 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AIKB30N65DF5ATMA1IR (Infineon Technologies) |
IC DISCRETE 650V TO263-3 |
|
|
TIG032TS-TL-HRochester Electronics |
NCH IGBT 180A 400V 2.5V |
|
|
HG24N60D1DRochester Electronics |
HG24N60D1D |
|
|
AFGHL75T65SQSanyo Semiconductor/ON Semiconductor |
IGBT WITH SIC COPACK DIODE IGBT |
|
|
IXYK30N170CV1Wickmann / Littelfuse |
DISC IGBT XPT-HI VOLTAGE TO-264( |
|
|
NGTD20T120F2SWKSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 1200V DIE |
|
|
HGT1S12N60B3DSRochester Electronics |
27A, 600V, UFS N-CHANNEL IGBT W/ |
|
|
ITF48IF1200HRWickmann / Littelfuse |
DISC IGBT XPT-GENX3 ISOPLUS247 |
|
|
IXYX200N65B3Wickmann / Littelfuse |
IGBT |
|
|
HGTG30N60C3Rochester Electronics |
63A, 600V, UFS N-CHANNEL IGBT |
|
|
MMIX1G120N120A3V1Wickmann / Littelfuse |
IGBT 1200V 220A 400W SMPD |
|
|
IXYH75N65C3D1Wickmann / Littelfuse |
DISC IGBT XPT-GENX3 TO-247AD |
|
|
IXYK120N120B3Wickmann / Littelfuse |
DISC IGBT XPT-GENX3 TO-264(3) |