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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | - |
| 电流 - 集电极 (ic) (max): | - |
| 电流 - 集电极脉冲 (icm): | - |
| vce(on) (max) @ vge, ic: | - |
| 功率 - 最大值: | - |
| 开关能量: | - |
| 输入类型: | - |
| 栅极电荷: | - |
| td（开/关）@ 25°c: | - |
| 测试条件: | - |
| 反向恢复时间 (trr): | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MOSFET N-CH |
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|
HGTP3N60C3Rochester Electronics |
6A, 600V, N-CHANNEL IGBT |
|
|
IXA30RG1200DHG-TUBWickmann / Littelfuse |
IGBT PHASELEG 1200V 30A SMPD |
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IKA15N65ET6XKSA1IR (Infineon Technologies) |
IGBT 650V 15A TO220-3 |
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HGTG40N60C3Rochester Electronics |
75A, 600V, N-CHANNEL IGBT |
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AFGHL50T65SQDSanyo Semiconductor/ON Semiconductor |
AEC 101 QUALIFIED, 650V, 50A FIE |
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|
FGD3040G2_F085Rochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
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HGTP7N60C3Rochester Electronics |
14A, 600V, UFS SERIES N-CHANNEL |
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RJP3082DPP-00#T2Rochester Electronics |
HIGH SPEED IGBT |
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BSM100GB120DN2KRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
|
HGT1S20N60C3RRochester Electronics |
40A, 600V, RUGGED N-CHANNEL IGBT |
|
|
HGTB12N60D1CRochester Electronics |
12A, 600V N-CHANNEL IGBT |
|
|
RJP30E2DPP-M0#T2Rochester Electronics |
IGBT |
