类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Not For New Designs |
igbt型: | Trench Field Stop |
电压 - 集电极发射极击穿(最大值): | 650 V |
电流 - 集电极 (ic) (max): | 150 A |
电流 - 集电极脉冲 (icm): | 225 A |
vce(on) (max) @ vge, ic: | 2.3V @ 15V, 75A |
功率 - 最大值: | 375 W |
开关能量: | 3.68mJ (on), 1.6mJ (off) |
输入类型: | Standard |
栅极电荷: | 68 nC |
td(开/关)@ 25°c: | 42ns/216ns |
测试条件: | 400V, 75A, 3Ohm, 15V |
反向恢复时间 (trr): | 85 ns |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HGTP10N50E1DRochester Electronics |
17.5A, 500V, N-CHANNEL IGBT |
|
RJP3053DPP-A9#T2FRochester Electronics |
HIGH SPEED IGBT, 300V, 30A |
|
FP40R12KT3GRochester Electronics |
FP40R12 - IGBT MODULE |
|
IRGP4078DPBFRochester Electronics |
IRGP4078 - DISCRETE IGBT WITH AN |
|
FS100R12PT4Rochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
IG77E20CSRochester Electronics |
IG77E20CS |
|
IGZ100N65H5Rochester Electronics |
IGZ100N65 - DISCRETE IGBT WITHOU |
|
AFGHL40T65SQDSanyo Semiconductor/ON Semiconductor |
AEC 101 QUALIFIED, 650V, 40A FIE |
|
IKA20N65ET6XKSA1IR (Infineon Technologies) |
IGBT 650V 20A TO220-3 |
|
IXGT6N170-TRLWickmann / Littelfuse |
IXGT6N170 TRL |
|
FD800R17HP4-K_B2Rochester Electronics |
FD800R17 - IGBT MODULE |
|
HGTH12N40CIDRochester Electronics |
12A, 400V, N CHANNEL IGBT WITH A |
|
IGC18T120T8QX1SA1IR (Infineon Technologies) |
IGBT 1200V 15A DIE |