类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
igbt型: | - |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 75 A |
电流 - 集电极脉冲 (icm): | 150 A |
vce(on) (max) @ vge, ic: | 2.5V @ 15V, 40A |
功率 - 最大值: | 250 W |
开关能量: | - |
输入类型: | Standard |
栅极电荷: | 250 nC |
td(开/关)@ 25°c: | 100ns/600ns |
测试条件: | 480V, 40A, 22Ohm, 15V |
反向恢复时间 (trr): | 200 ns |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-204AE |
供应商设备包: | TO-204AE |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IHY30N160R2XKSA1IR (Infineon Technologies) |
IGBT 1600V 30A 312W TO247HC-3 |
|
SIGC54T60R3EX1SA3IR (Infineon Technologies) |
IGBT CHIP |
|
SIGC121T60NR2CX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC14T60NCX1SA6IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IGC54T65R3QEX1SA1IR (Infineon Technologies) |
IGBT CHIP |
|
SIGC18T60UNX1SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SGTB11N60R2DT4GSanyo Semiconductor/ON Semiconductor |
RC2 IGBT 10A 600V DPAK |
|
SIGC76T60R3EX1SA1IR (Infineon Technologies) |
IGBT CHIP |
|
SIGC39T60EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 75A WAFER |
|
SIGC06T60EX1SA2IR (Infineon Technologies) |
IGBT CHIP |
|
IRG7CH28UEFIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
IRGC100B60KBIR (Infineon Technologies) |
IGBT CHIP |
|
SIGC81T60SNCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |