类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
igbt型: | - |
电压 - 集电极发射极击穿(最大值): | - |
电流 - 集电极 (ic) (max): | - |
电流 - 集电极脉冲 (icm): | - |
vce(on) (max) @ vge, ic: | - |
功率 - 最大值: | - |
开关能量: | - |
输入类型: | - |
栅极电荷: | - |
td(开/关)@ 25°c: | - |
测试条件: | - |
反向恢复时间 (trr): | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRG7CH42UEFIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
IGC41T120T8QX7SA2IR (Infineon Technologies) |
IGBT 1200V 40A DIE |
|
AUXKNG4PH50S-215IR (Infineon Technologies) |
IGBT 1200V TO247-3 |
|
IRGC49B120UBIR (Infineon Technologies) |
IGBT CHIP |
|
SIGC81T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IXYH16N250CWickmann / Littelfuse |
IGBT 2500V 35A TO247AD |
|
SIGC07T60SNCX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
RJP4009ANS-01#Q5Renesas Electronics America |
IGBT NCH 400V 8VSON |
|
SIGC18T60SNCX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
PCISL9R860WSanyo Semiconductor/ON Semiconductor |
IGBT PCISL9R860W |
|
SIGC42T60UNX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IRG4CC80SBIR (Infineon Technologies) |
IGBT CHIP |
|
SIGC18T60SNCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |