English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | - |
| 电流 - 集电极 (ic) (max): | - |
| 电流 - 集电极脉冲 (icm): | - |
| vce(on) (max) @ vge, ic: | - |
| 功率 - 最大值: | - |
| 开关能量: | - |
| 输入类型: | - |
| 栅极电荷: | - |
| td（开/关）@ 25°c: | - |
| 测试条件: | - |
| 反向恢复时间 (trr): | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRG4CC40UBIR (Infineon Technologies) |
IGBT CHIP |
|
|
SIGC14T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
IRG7CH73UEF-RIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
|
PCG60N60SFFSanyo Semiconductor/ON Semiconductor |
IGBT PCG60N60SFF |
|
|
SIGC81T60SNCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
SIGC07T60NCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
STKSF1U3E2D-ESanyo Semiconductor/ON Semiconductor |
STKSF1U3E2D-E |
|
|
PCRH30120WSanyo Semiconductor/ON Semiconductor |
IGBT PCRH30120W |
|
|
LGB8207BTHWickmann / Littelfuse |
IGBT 365V 20A 165W D2PAK3 |
|
|
APT70GR65B2SCD30Microsemi |
INSULATED GATE BIPOLAR TRANSISTO |
|
|
LGD8209TIWickmann / Littelfuse |
IGBT 410V 12A 125W DPAK-3 |
|
|
NGTD17T65F2SWKSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 650V DIE |
|
|
SIGC100T60R3EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 200A WAFER |
