English
简体中文
0402 ANTI-SULFUR RES. , 0.5%, 36
IGBT 600V 150A 400W ISOPLUS264
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GenX3™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| igbt型: | PT |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 150 A |
| 电流 - 集电极脉冲 (icm): | 600 A |
| vce(on) (max) @ vge, ic: | 1.5V @ 15V, 100A |
| 功率 - 最大值: | 400 W |
| 开关能量: | 1.6mJ (on), 2.9mJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 750 nC |
| td（开/关）@ 25°c: | 44ns/310ns |
| 测试条件: | 300V, 100A, 1Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | ISOPLUS264™ |
| 供应商设备包: | ISOPLUS264™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IGC10T65U8QX1SA1IR (Infineon Technologies) |
IGBT CHIP |
|
|
SIGC18T60SNCX1SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
PCHG2N120WSanyo Semiconductor/ON Semiconductor |
IGBT PCHG2N120W |
|
|
SIGC12T60SNCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
RJP65T54DPM-E0#T2Renesas Electronics America |
IGBT TRENCH TO-3FP |
|
|
NGTD13T65F2WPSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 650V DIE |
|
|
IGC70T120T8RQIR (Infineon Technologies) |
IGBT 1200V 75A DIE |
|
|
IRG8CH106K10FIR (Infineon Technologies) |
IGBT 1200V 110A DIE |
|
|
IRG4CC50UBIR (Infineon Technologies) |
IGBT DIE |
|
|
SIGC42T60NCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
IRG7CH46UEFIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
|
IRGC50B60KBIR (Infineon Technologies) |
IGBT CHIP |
|
|
SIGC14T60SNCX1SA6IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |