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JFET N-CH 50V 0.1W USM
IC DRAM 16MBIT PARALLEL 60TFBGA
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 电压 - 击穿 (v(br)gss): | 50 V |
| 漏源电压 (vdss): | - |
| 电流 - 漏极 (idss) @ vds (vgs=0): | 6 mA @ 10 V |
| 电流消耗 (id) - 最大值: | - |
| 电压 - 截止 (vgs off) @ id: | 1.5 V @ 100 nA |
| 输入电容 (ciss) (max) @ vds: | 13pF @ 10V |
| 电阻 - rds(on): | - |
| 功率 - 最大值: | 100 mW |
| 工作温度: | 125°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SC-70, SOT-323 |
| 供应商设备包: | SC-70 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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