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650V 25 MOHM SIC JFET, G3, N-ON,
NO CONTROLLER, SCT3210 27.2" 8"
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 电压 - 击穿 (v(br)gss): | 650 V |
| 漏源电压 (vdss): | 650 V |
| 电流 - 漏极 (idss) @ vds (vgs=0): | - |
| 电流消耗 (id) - 最大值: | 85 A |
| 电压 - 截止 (vgs off) @ id: | - |
| 输入电容 (ciss) (max) @ vds: | 2360pF @ 100V |
| 电阻 - rds(on): | 33 mOhms |
| 功率 - 最大值: | 441 W |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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