IC DRAM 512MBIT PARALLEL 60FBGA
SMALL SIGNAL FET
FACEPLATE ACCESSORY
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
电压 - 击穿 (v(br)gss): | - |
漏源电压 (vdss): | - |
电流 - 漏极 (idss) @ vds (vgs=0): | 140 µA @ 2 V |
电流消耗 (id) - 最大值: | 1 mA |
电压 - 截止 (vgs off) @ id: | 200 mV @ 1 µA |
输入电容 (ciss) (max) @ vds: | 3.5pF @ 2V |
电阻 - rds(on): | - |
功率 - 最大值: | 100 mW |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 3-SMD, Flat Lead |
供应商设备包: | VTFP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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电话: 00852-52612101
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