类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
场效应管类型: | N-Channel |
电压 - 击穿 (v(br)gss): | 40 V |
漏源电压 (vdss): | - |
电流 - 漏极 (idss) @ vds (vgs=0): | - |
电流消耗 (id) - 最大值: | 5 mA |
电压 - 截止 (vgs off) @ id: | - |
输入电容 (ciss) (max) @ vds: | 14pF @ 20V |
电阻 - rds(on): | 100 Ohms |
功率 - 最大值: | - |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2N4857JTX02Vishay / Siliconix |
JFET N-CH 40V 360MA TO-18 |
|
2N4861JAN02Vishay / Siliconix |
JFET N-CH 30V TO-206 |
|
2N5115JTVL02Vishay / Siliconix |
JFET P-CH 30V TO-18 |
|
J2A012ZXY/S1AZ197JNXP Semiconductors |
TRANSISTOR JFET |
|
CP210-2N4416-CTCentral Semiconductor |
JFET N-CH AMP CHIP FORM 1=400 |
|
U441Vishay / Siliconix |
JFET 2N-CH 25V TO-71 |
|
2N4858JTVP02Vishay / Siliconix |
MOSFET JFET P-CH |
|
J2A012ZXS/S1AZ312JNXP Semiconductors |
TRANSISTOR JFET |
|
TF262TH-5-TL-HSanyo Semiconductor/ON Semiconductor |
JFET N-CH 1MA 100MW |
|
2N5433Vishay / Siliconix |
JFET N-CH 25V 0.3W TO-52 |
|
J5A080GHN/T0BG2084NXP Semiconductors |
TRANSISTOR JFET |
|
2N5432-2Vishay / Siliconix |
JFET N-CH 25V 0.3W TO-52 |
|
2N4860JTXV02Vishay / Siliconix |
JFET N-CH 30V TO-206 |