类型 | 描述 |
---|---|
系列: | FL-L |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WFDFN Exposed Pad |
供应商设备包: | 8-WSON (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FS064SAGMFV010MRochester Electronics |
SERIAL FLASH, 1.8V, 64MB |
|
AT28LV010-20JU-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
S29AS008J70BFA043Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48FBGA |
|
BR24C16-RMN6TPROHM Semiconductor |
IC EEPROM 16KBIT I2C 100KHZ 8SO |
|
IS43LR16320C-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
MT29F1G01ABAFD12-AAT:FMicron Technology |
IC FLASH 1GBIT SPI 24TBGA |
|
24LC02BHT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY14B512Q1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 64KX8, CMOS, |
|
71V65703S75BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
AT25SF128A-MHB-TAdesto Technologies |
IC FLASH 128MBIT SPI/QUAD 8UDFN |
|
CY7C199CL-15VCRochester Electronics |
STANDARD SRAM, 32KX8, 15NS |
|
SST39VF1601-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
FM93C56EM8XRochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |