English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, SST25 |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 40 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.3V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FT24C16A-ETR-TFremont Micro Devices |
IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |
|
S29GL01GT13TFNV10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
24FC04-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
AS4C64M8D1-5BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT28BV256-20TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
IS43DR81280C-25DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
24LC32AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |
|
S29GL064S80TFV040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
CAT25040VIRochester Electronics |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |
|
CY7C1313V18-200BZCRochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
CY62167G30-45BVXACypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
S25FL116K0XMFA010Flip Electronics |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S29GL01GT11DHV020Rochester Electronics |
IC FLASH 1GBIT PARALLEL 64FBGA |
