类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 450 µs |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C0853V-133BBCRochester Electronics |
IC SRAM 9MBIT PARALLEL 172FBGA |
|
S29GL01GP13TFIV10Flip Electronics |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
FM93C86ANRochester Electronics |
EEPROM, 1KX16, SERIAL PDIP8 |
|
FM25C640UEM8Rochester Electronics |
EEPROM, 8KX8, SERIAL, CMOS |
|
SST25VF040B-50-4C-SAFRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
71T75602S100BGG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS43TR16128C-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
M95512-DWDW4TP/KSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
IS61LF51236B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
CY62256V-70SNCTRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
AS7C34096A-10TCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
IS43DR16320D-25DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
MX25L25655FXCI-10GMacronix |
IC FLASH 256MBIT SPI 24CSPBGA |