类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 450 ns |
电压 - 电源: | 1.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 6-XFBGA, WLCSP |
供应商设备包: | 6-WLCSP (1.2x0.80) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39VF1602C-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
24AA024HT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
DS28E01P-100+Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
SST39LF400A-55-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
S29GL128S10DHSS20Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AS4C1M16S-6TCNAlliance Memory, Inc. |
IC DRAM 16MBIT PAR 50TSOP II |
|
BR95040-WMN6TPROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8SO |
|
IS43LR16160G-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
70V657S10BCGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
CAT24M01XI-T2Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
FM27C010V150Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
THGAF8T1T83BAIRToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 256GBIT UFS 153VFBGA |
|
24FC128T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8MSOP |