类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C34096A-10JINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
IS61VF204836B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
IS45S16400J-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
IS43R16320E-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
71016S20YRochester Electronics |
SRAM 1 MEG (64K X 16-BIT) |
|
93LC56BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8MSOP |
|
CY7C1021CV33-15ZSXARochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AT28HC256E-90JURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
S29GL512T11DHIV23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
11AA02UIDT-I/TTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE SOT23-3 |
|
NM24C04ULM8XRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8SO |
|
24VL014HT/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
IS46R16160D-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |