类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70T653MS10BCGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
CY7C1318BV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS42VM32400H-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
93LC66CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
M24512-DFDW6TPSTMicroelectronics |
IC EEPROM 512KBIT I2C 8TSSOP |
|
CY621472G30-45ZSXACypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS42S16320F-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY7C1514AV18-250BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
25LC128-E/SMRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIJ |
|
S29CD016J0PQAM010Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
|
CY7C1362S-200AXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
93LC46AT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ SOT23-6 |
|
71V65803S133BGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |