English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, DDR II+ |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL01GS12DHIV20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MX25L25673GM2I-10GMacronix |
IC FLASH 256MBIT SPI 120MHZ 8SOP |
|
CY7C1313KV18-250BZCCypress Semiconductor |
NO WARRANTY |
|
IS61VPS25636A-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S-25C640A0I-K8T3U3ABLIC U.S.A. Inc. |
IC EEPROM 64KBIT SPI 5MHZ 8TMSOP |
|
IS43R83200F-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
AT27BV256-70JURoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
IS43TR81280B-107MBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
LE24L042CS-B-TFM-HRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 4WLP |
|
CY7C145-15JCTRochester Electronics |
DUAL-PORT SRAM, 8KX9, 15NS |
|
25LC080A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
CY7C1320JV18-300BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1513KV18-300BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
