类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, ZBT |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.3V ~ 2.7V, 3V ~ 3.6V |
工作温度: | -40°C ~ 100°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (20x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46DR16640B-25DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
CY7C1362A-166AJCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT24MAC402-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8UDFN |
|
MX30LF4G18AC-TIMacronix |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
CY14B104NA-ZS45XETCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
AT28LV010-20TU-319Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
S25FL164K0XMFV000Flip Electronics |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
71V416L12BEG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
BR25L020FVJ-WE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 5MHZ 8TSSOP |
|
MT25QL512ABB8ESF-0AATMicron Technology |
IC FLASH 512MBIT SPI 16SOP2 |
|
CY7C1011CV33-15AXIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
MT29C4G48MAZBBAKB-48 ITMicron Technology |
IC FLASH RAM 4GBIT PAR 168WFBGA |
|
71V546XS133PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |