English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字，页: | 8µs, 3.5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.65V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S-24C256CI-J8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 256KBIT I2C 1MHZ 8SOP |
|
FM93C56LZNRochester Electronics |
EEPROM, 128X16, SERIAL PDIP8 |
|
24LC32AF-E/PRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |
|
S29GL032N90DFI020ARochester Electronics |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
M24C04-FDW5TPSTMicroelectronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
IS42S81600F-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS43R16800E-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
NV25080DTHFT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
CY2149-45PCRochester Electronics |
STANDARD SRAM, 1KX4, 45NS |
|
IS34ML01G081-BLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
70V658S12BFRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
71V2556S133PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS43LR32640A-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 90WBGA |
