类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 2Mb (128K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.400", 10.16mm Width) |
供应商设备包: | 32-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C32096A-10TINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
UPD44164362BF5-E40-EQ3-ARochester Electronics |
DDR SRAM, 512KX36, 0.45NS |
|
25LC128-H/SNRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 5MHZ 8SOIC |
|
S29GL256S90FAI013Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AT21CS01-SSHM16-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ 8SOIC |
|
25AA080-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 1MHZ 8SOIC |
|
71V3557S80PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY14B108L-ZS25XITCypress Semiconductor |
IC NVSRAM 8MBIT PAR 44TSOP II |
|
MR45V200BRAZAARLROHM Semiconductor |
IC FRAM 2MBIT SPI 34MHZ 8DIP |
|
CY7C1318TV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CAT25640YI-GRochester Electronics |
IC EEPROM 64KBIT SPI 8TSSOP |
|
AS7C34096A-10JINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
71V416L12YIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |