







IC VREF SHUNT 0.5% SOT23-3
IC EEPROM 1KBIT I2C VSON008X2030
IC NVSRAM 8MBIT PAR 44TSOP II
ORANGE 590NM/YELLOW 572NM
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字,页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.6V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-UFDFN Exposed Pad |
| 供应商设备包: | VSON008X2030 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT29F1T08EEHAFJ4-3T:AMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
|
IS37SML01G1-LLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1GBIT SPI 104MHZ 8WSON |
|
|
AS4C64M8D1-5BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
|
70V659S12BFGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208FPBGA |
|
|
IS42S16160J-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
|
MT58L128V36P1F-6Rochester Electronics |
CACHE SRAM, 128KX36, 3.5NS PBGA1 |
|
|
24LC02BH-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
|
IS43TR81024B-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 78TWBGA |
|
|
CY62137FV18LL-55BVXICypress Semiconductor |
IC SRAM 2MBIT PARALLEL 48VFBGA |
|
|
CY62136CV30LL-70BAITRochester Electronics |
STANDARD SRAM, 128KX16 |
|
|
IS61LF102418B-6.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
|
AS7C1026B-15JINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
|
SST25VF512A-33-4I-QAERoving Networks / Microchip Technology |
IC FLASH 512KBIT SPI 33MHZ 8WSON |