English
简体中文
IC DRAM 512MBIT PARALLEL 90VFBGA
IQS620 EVALUATION KIT 1
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR |
| 内存大小: | 512Mb (16M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-VFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL512S10FHI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
70V657S12BFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
24FC04H-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
MT29F2G08ABAGAWP-AITES:GMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
MT46V64M8P-5B:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MX29GL512FDT2I-12GMacronix |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
MX25L4006EZUI-12GMacronix |
IC FLASH 4MBIT SPI 86MHZ 8USON |
|
AS4C64M32MD1-5BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 90FBGA |
|
CAT93C56V-TE13Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
71V3558S100PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
25AA160C-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
IS43DR86400E-25DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
S25FS512SAGNFV011Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |