类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62147EV30LL-55ZSXERochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT28C256E-15LM/883-815Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |
|
S29GL512S10FHSS60Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
S29AL016J55TFNR10Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY15V104QSN-108SXICypress Semiconductor |
IC FRAM 4MBIT SPI/QUAD I/O 8SOIC |
|
S29GL512T11DHIV10YRochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
FM25V02A-DGTRCypress Semiconductor |
IC FRAM 256KBIT SPI 40MHZ 8DFN |
|
IS66WVE1M16EBLL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 16MBIT PARALLEL 48TFBGA |
|
EM68A16CBQC-25IHEtron Technology |
IC DRAM 256MBIT PARALLEL 84FBGA |
|
AT25M02-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 2MBIT SPI 5MHZ 8SOIC |
|
PC28F640P33BF60AAlliance Memory, Inc. |
IC FLASH 64MBIT PAR 64EASYBGA |
|
TMS29F040-90C5FMLRochester Electronics |
FLASH, 512KX8, 90NS, PQCC32 |
|
S29GL512T10DHA020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |