English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 9Mb (512K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4.2 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAV24M01YE-GT3Rochester Electronics |
IC EEPROM 1MBIT I2C 1MHZ 8TSSOP |
|
W25Q128JVSIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
71V3556SA100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
70T633S10BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
W25X20CLZPIG TRWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 104MHZ 8WSON |
|
24AA128-I/MFRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8DFN |
|
AS6C2008A-55TINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 32TSOP I |
|
CY7C1315BV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
7134LA35CBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL SB48 |
|
93C66BT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TDFN |
|
S29GL01GT11FHV010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
25AA256-E/SMRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIJ |
|
W25Q128JWCIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI 24TFBGA |
