English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8, 1K x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FM93C56AEM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
70V08L20PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
SST39LF402C-55-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CAT25C64VA-1.8Rochester Electronics |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
CY7C1338S-100AXCRochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
CY7C1145LV18-400BZXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
M95512-DRDW8TP/KSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
IS61NLF25636A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S25FL256SDSBHB213Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
24C00T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 128B I2C SOT23-5 |
|
MT57V512H36AF-7.5Rochester Electronics |
DDR SRAM, 512KX36, 3.6NS, CMOS, |
|
M93S56-WMN6TSTMicroelectronics |
IC EEPROM 2KBIT SPI 2MHZ 8SO |
|
S29GL01GT12DHN013Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
