English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 2Mb (128K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-VFBGA |
| 供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24FC02T-E/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ SOT23-5 |
|
24AA08T-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 8TSSOP |
|
MT46V64M8CY-5B:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
7132LA55PDGIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48DIP |
|
USBF129T-I/SNRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 30MHZ 8SOIC |
|
IS62WV102416EALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CAT24AA08WI-GRochester Electronics |
IC EEPROM 8KBIT I2C 1MHZ 8SOIC |
|
AT45DQ161-SSHFHJ-TAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
DS1250Y-70IND+Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
71V65603S150PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V416L10BEG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY7C1460KV33-200AXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
CY7C4141KV13-633FCXICypress Semiconductor |
IC SRAM 144MBIT PAR 361FCBGA |
