类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 4Gb (256M x 16) |
内存接口: | - |
时钟频率: | 1.066 GHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-FBGA (7.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS6C4008-55SINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32SOP |
|
25AA080A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
IS42VM16320D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
IS61VF204836B-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
CY7C1312CV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
GD25Q64CSJGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
M24512-RDW6TPSTMicroelectronics |
IC EEPROM 512KBIT I2C 8TSSOP |
|
25LC080BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
IS66WVH8M8ALL-166B1LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 24TFBGA |
|
7027L15PFGRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
M29F800FB5AN6E2Alliance Memory, Inc. |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
CY7C1512KV18-250BZXCRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |
|
MT53D512M16D1DS-046 AAT:DMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |