English
简体中文
SENSOR PRES 14.5PSI ABS
IC SRAM 2MBIT PARALLEL 48VFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 2Mb (128K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 1.65V ~ 2.25V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-VFBGA |
| 供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S32160F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
IS43TR82560C-15HBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
CAT93C76YI-GT3Rochester Electronics |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
|
CYD02S36V18-200BBXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 256FBGA |
|
GS840Z18CGT-250IGSI Technology |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
24FC512T-I/STRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
CY7S1041G30-10VXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CY7C1470V25-167BZCRochester Electronics |
ZBT SRAM, 2MX36, 3.4NS, CMOS, PB |
|
FEMC016GDE-TC40Flexxon |
XTRA V EMMC 5.1 16GB 3D PMLC DIA |
|
CY7C1362A-200BGCRochester Electronics |
CACHE SRAM, 512KX18, 3NS |
|
70T3599S133BCI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY62128BNLL-70ZAXETRochester Electronics |
IC SRAM 1MBIT 70NS 32STSOP |
|
CY7C1460KV33-167AXCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |