类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1061GE30-10BV1XICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
71V547S80PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
25LC320AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 8TSSOP |
|
CY7C1380S-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS64LF12832A-7.5TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
25LC020AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8TSSOP |
|
N08L63W2AB7IRochester Electronics |
STANDARD SRAM, 512KX16 |
|
70V3399S166BFRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
MX25L6473EMBI-10GMacronix |
IC FLASH 64MBIT SPI 104MHZ 8VSOP |
|
MT58L64L32DT-10Rochester Electronics |
CACHE SRAM, 64KX32, 5NS PQFP100 |
|
S25FL064LABMFI013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
24LC02B-I/SNGRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
AM27S25SAJCRochester Electronics |
AM27S25 - OTP ROM, 512X8, 12NS |