







SENSOR AMP 150PSI 1-5VDC OUT
TL3116 HIGH SPEED DIFFERENTIAL C
IC FLASH 512MBIT PARALLEL 56TSOP
PPT2 MV 5V 1FS -55TO110 10PSIG
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 60ns |
| 访问时间: | 110 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
24AA025E64T-E/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-5 |
|
|
24C16-E/SLRochester Electronics |
2K X 8 I2C/2-WIRE SERIAL EEPROM |
|
|
71V65703S75PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
|
W989D6DBGX6I TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
|
24C02C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
|
70V3389S6BC8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
|
25LC640AT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8TDFN |
|
|
25AA020AT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI SOT23-6 |
|
|
MX30LF1208AA-TIMacronix |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
|
24LC21T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
|
MT46H64M16LFBF-5 AIT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
|
S29GL01GS10TFI013Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
|
IS45S16320D-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |