English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-T |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (64M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
6116LA120DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
24LC04BH-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
CAT25256YI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 8TSSOP |
|
CY7C1061G-10ZXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
TMS27PC256-17FMLRochester Electronics |
OTP ROM, 32KX8, 170NS PQCC32 |
|
93C46AT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
IS43R86400F-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
25LC010AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8TSSOP |
|
71V3559S85BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
STK12C68-WF25IRochester Electronics |
NON-VOLATILE SRAM, 8KX8, 25NS PD |
|
IS66WVE2M16EBLL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 48TFBGA |
|
S34ML04G200TFI900Flip Electronics |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
S25FL256SAGMFI013Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
