类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 90 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-CLCC |
供应商设备包: | 32-LCC (11.43x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NV25040DWHFT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
R1LV0416DSB-7LI#B0Rochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
|
8403606JARochester Electronics |
STANDARD SRAM, 2KX8, 70NS CDIP24 |
|
AT24C01C-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8SOIC |
|
7134LA20JGRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
CY62167GE30-45ZXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
71256SA20PZGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
W9816G6JH-6 TRWinbond Electronics Corporation |
IC DRAM 16MBIT PAR 50TSOP II |
|
AS4C128M16D3LC-12BINAlliance Memory, Inc. |
IC DRAM 2GBIT 800MHZ 96FBGA |
|
70261L20PFGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
SST39LF801C-55-4C-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48WFBGA |
|
N01S818HAT22ITRochester Electronics |
IC SRAM 1MBIT SPI 20MHZ 8TSSOP |
|
MR25H40CDFREverspin Technologies, Inc. |
IC RAM 4MBIT SPI 40MHZ 8DFN |