English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.5 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1462SV25-200AXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
S29JL064J70TFI003Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
MX25L12865EMI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 16SOP |
|
IS43TR16K01S2AL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16GBIT PARALLEL 96LWBGA |
|
S25FL256SAGMFV000JRochester Electronics |
SERIAL FLASH, 256MB |
|
BQ4011YMA-150NRochester Electronics |
IC NVSRAM 256KBIT PARALLEL 28DIP |
|
MB85RS2MTAPH-G-JNE2Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 40MHZ 8DIP |
|
S25FL256SAGNFV000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
7008L20PFGIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IS43DR16640B-3DBIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
IS61VPS102436B-250B3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165TFBGA |
|
CAT28C512HI-15Rochester Electronics |
IC EEPROM 512KBIT PAR 32TSOP |
|
MT55L64L36P1T-10Rochester Electronics |
ZBT SRAM, 64KX36, 5NS PQFP100 |
