English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SST25 |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 50 MHz |
| 写周期时间 - 字，页: | 10µs |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R1EX24256BSAS0A#U0Rochester Electronics |
IC EEPROM 256KBIT I2C 8SOP |
|
CY7C187-25VXCRochester Electronics |
STANDARD SRAM, 64KX1, 25NS, CMOS |
|
CY7C197-45VCTRochester Electronics |
STANDARD SRAM, 256KX1, 45NS |
|
IS61LP6436A-133TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
W25Q64JWXGIQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8XSON |
|
MT58L512V18PT-6Rochester Electronics |
CACHE SRAM, 512KX18, 3.5NS PQFP1 |
|
25LC040AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8TSSOP |
|
MT29F512G08EBHAFJ4-3ITFES:AMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
MT57W1MH18JF-6Rochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
M93C56-WDW6TPSTMicroelectronics |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
IS43R86400D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
MX25U8035EM1I-10GMacronix |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
IS45S16320D-6CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
