类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL512T11TFIV30Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
93LC66AT/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
SST39VF3201C-70-4I-EKE-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IS61LPS25636A-200TQ2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
SMJ61CD16LA-35FGMRochester Electronics |
STANDARD SRAM, 16KX1 |
|
SST39VF020-70-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IS42SM32400H-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
SST39WF1602-70-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
CY7C1414BV18-250BZXIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT58L128V32P1T-7.5Rochester Electronics |
CACHE SRAM, 128KX32, 4NS PQFP100 |
|
24AA32A-I/SMRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIJ |
|
93C46-I/JRochester Electronics |
1K BIT MICROWIRE SERIAL EEPROM |
|
CY7C1315BV18-200BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |