类型 | 描述 |
---|---|
系列: | StrataFlash™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (2M x 16) |
内存接口: | CFI |
时钟频率: | 52 MHz |
写周期时间 - 字,页: | - |
访问时间: | 85 ns |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-TBGA |
供应商设备包: | 64-EasyBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT48LC4M32B2B5-6A AAT:LMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
70V3379S6BCRenesas Electronics America |
IC SRAM 576KBIT PAR 256CABGA |
|
25C080/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
71256L100DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
24LC32AF-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |
|
AF032GEC5X-2001IXATP Electronics, Inc. |
IC 32GBIT 153BGA |
|
IS46R16160F-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
IS42S83200J-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY7C1062G30-10BGXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
M24C04-DRMN3TP/KSTMicroelectronics |
IC EEPROM 4KBIT I2C 1MHZ 8SO |
|
CY7C1021BN-15ZCRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
S29AL016J70BFI012Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
M24C01-RDW6TPSTMicroelectronics |
IC EEPROM 1KBIT I2C 8TSSOP |