







RES ARRAY 2 RES 53.6K OHM 0606
BALL KNOB BRASS INSERT 1.41"
IC REG LINEAR 1.5V 200MA HVSOF5
IC DRAM 2GBIT PARALLEL 60VFBGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR |
| 内存大小: | 2Gb (128M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 208 MHz |
| 写周期时间 - 字,页: | 14.4ns |
| 访问时间: | 5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -25°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-VFBGA |
| 供应商设备包: | 60-VFBGA (8x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
24LC1026T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIC |
|
|
NM24C03FLZEM8Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SO |
|
|
CY7C1470BV25-167BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
|
70T631S12BCIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
|
AT24C512C-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
|
UPD46185094BF1-E33-EQ1-ARochester Electronics |
QDR SRAM, 2MX9, 0.45NS |
|
|
IS66WVE4M16EALL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
|
IS43LD32640B-25BPLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
|
FM24C03ULNRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
|
CAT25040LRochester Electronics |
IC EEPROM 4KBIT SPI 20MHZ 8DIP |
|
|
AT28HC64BF-12SU-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
|
MX25U12835FM2I-10GMacronix |
IC FLASH 128MBIT SPI/QUAD 8SOP |
|
|
MT29F64G08CBEDBJ4-12M:D TRMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |