English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-SOIC (0.400", 10.16mm Width) |
| 供应商设备包: | 32-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61LPS204818B-200B3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165TFBGA |
|
CY7C1418KV18-250BZXCCypress Semiconductor |
NO WARRANTY |
|
SST26WF016B-104I/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
CY14B116N-Z45XITCypress Semiconductor |
IC NVSRAM 16MBIT PAR 48TSOP I |
|
11LC020-E/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SINGLE WIRE 8DIP |
|
71V424L12PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
BR24G256F-3AGTE2ROHM Semiconductor |
IC EEPROM 256KBIT I2C 1MHZ 8SOP |
|
S29GL512T11DHB020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
NV24C08MUW3VLTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 1MHZ 8UDFN |
|
CY14B108L-BA25XICypress Semiconductor |
IC NVSRAM 8MBIT PARALLEL 48FBGA |
|
24CW1280T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
CY7C1061GN30-10ZSXIFlip Electronics |
IC SRAM 16MBIT PAR 54TSOP II |
|
71V2556S133PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
