English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (512K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 87 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 8.5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71024S12TYGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
24AA512T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
DS1225AB-200+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
SST25WF080BT-40I/SNRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 40MHZ 8SOIC |
|
SST39VF010-70-4I-WHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS43R16160D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
24VL025T/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
AS4C64M16D3LB-12BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
CAT24C01VP2I-GT3Rochester Electronics |
IC EEPROM 1KBIT I2C 400KHZ 8TDFN |
|
AS4C64M8D2-25BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS61WV25616EDBLL-8BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
IS43LD16128B-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
CY15B104QI-20LPXICypress Semiconductor |
IC FRAM 4MBIT SPI 20MHZ 8GQFN |
