English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MX25xxx05/06/08 |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 64Mb (8M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 86 MHz |
| 写周期时间 - 字，页: | 300µs, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WDFN Exposed Pad |
| 供应商设备包: | 8-WSON (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1360C-166BZXCRochester Electronics |
CACHE SRAM, 256KX36, 3.5NS |
|
23A512T-E/SNRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8SOIC |
|
S29GL256N10TFI010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS42S16400J-7B2LIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 60TFBGA |
|
DS1245Y-120IND+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
70V9199L9PFGIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
71V65603ZS133PFGRochester Electronics |
71V65603 - 256K X 36 3.3V SYNCHR |
|
CY7C1470V25-167BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
MT29F32G08CBADBWP-12IT:DMicron Technology |
IC FLASH 32GBIT PAR 48TSOP I |
|
CY7C243-25JCRochester Electronics |
OTP ROM, 4KX8, 25NS PQCC28 |
|
IS62WV12816BLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
S29AL008J70BFI010Rochester Electronics |
FLASH, 512KX16, 70NS, PBGA48 |
|
R1LP0108ESF-5SI#S1Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP |
