English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL256SAGMFV013Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
IS61VF51236B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
25AA256-E/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
7005L20PFGI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
S-25C128A0I-J8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 128KBIT SPI 5MHZ 8SOP |
|
S-25C640A0I-T8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 64KBIT SPI 5MHZ 8TSSOP |
|
71V546S100PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61DDB22M36A-300B4LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
AT24C512C-SSHD-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
S34ML01G200BHV000Rochester Electronics |
IC FLASH 1GBIT PARALLEL 63BGA |
|
AT24C256C-XHL-BRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
71V67803S133BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IS43R16320E-5TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
