类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS25WP016D-JMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 16SOIC |
|
IS29GL256-70FLEBISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT PAR 64LFBGA |
|
25LC128-E/MFRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 10MHZ 8DFN |
|
93LC56CT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8DFN |
|
SST39LF801C-55-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
24LC01BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
W29N01HVSINAWinbond Electronics Corporation |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
CY7C0851V-133BBIRochester Electronics |
DUAL-PORT SRAM, 64KX36 |
|
CAT24C32VP2I-GT3-CSRochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8TDFN |
|
IS43R16800E-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
IS61DDB24M18A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
71421LA25PFGIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
AS7C316096B-10TINAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 44TSOP2 |