English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 2.2V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WFDFN Exposed Pad |
| 供应商设备包: | 8-TDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CYDMX256A16-90BVXIRochester Electronics |
IC SRAM 256KBIT PAR 100VFBGA |
|
CY7C1049BV33-15VITRochester Electronics |
STANDARD SRAM, 512KX8, 15NS |
|
AS4C16M16SA-7BCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
GS81302Q37AGD-450IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
AT25DN256-MAHF-TAdesto Technologies |
IC FLASH 256KBIT SPI 8UDFN |
|
N25Q128A13ESF40GFlip Electronics |
IC FLASH 128MBIT SPI 16SOP2 |
|
MT29F4G08ABADAWP-IT:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
MT41J256M8DA-125:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
IS61LF12836EC-6.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
34AA04-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
CY15E064Q-SXACypress Semiconductor |
IC FRAM 64KBIT SPI 20MHZ 8SOIC |
|
24LC16BHT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TDFN |
|
MT40A256M16LY-062E IT:F TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
