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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL512SDPBHVC10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
IS61C5128AS-25TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
SST39VF802C-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
PY62256VLL-70ZCRochester Electronics |
256K (32K X 8) SRAM |
|
S29GL256S10TFV023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
MX25L2006EZNI-12GMacronix |
IC FLASH 2MBIT SPI 86MHZ 8WSON |
|
043641WLAD-7Rochester Electronics |
256KX18 SRAM |
|
MT48LC64M8A2P-75IT:C TRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
S70FS01GSDSMFI010Cypress Semiconductor |
IC FLSH 1GBIT SPI/QUAD I/O 24BGA |
|
24C01CT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8TDFN |
|
CY62157DV20L-55BVIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
70V659S10BCGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
W966D6HBGX7IWinbond Electronics Corporation |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
