类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70T659S10BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S25FL512SAGBHIS13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
CAT28LV64GI-15Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
S70FS01GSAGMFV011Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
|
MT29F2G01ABAGD12-AAT:G TRMicron Technology |
IC FLASH 2GBIT SPI 83MHZ 24TPBGA |
|
MX25L6445EMI-10GMacronix |
IC FLASH 64MBIT SPI 104MHZ 16SOP |
|
M24C16-RDW6TPSTMicroelectronics |
IC EEPROM 16KBIT I2C 8TSSOP |
|
71V67703S85PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7B139-25JCRochester Electronics |
DUAL-PORT SRAM, 4KX9, 25NS, |
|
IS43R16320D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY7C107B-20VCTRochester Electronics |
STANDARD SRAM, 1MX1, 20NS |
|
CY62147EV18LL-45BVXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
IS62WV5128EBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |